Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

被引：6

作者：

Liu, Yi-Jung ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Cheng, Shiou-Ying ^{[3
]}

Lin, Kun-Wei ^{[4
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

[4] Chaoyang Univ Technol, Dept Comp Sci & Informat Engn, Taichung 50094, Taiwan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 | 2011年 / 8卷 / 05期

关键词：

light-emitting diode; vicinal sapphire; gallium nitride; ESD CHARACTERISTICS; QUANTUM-WELLS; LEDS; FILMS; REDUCTION;

D O I：

10.1002/pssc.201000579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2 degrees tilt sapphire substrate exhibits the lowest defect density while that with a 1.0 degrees tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2 degrees-tilt sapphire. At 60 mA, the improved value is up to 45.7 %. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1664 / 1668

页数：5

共 50 条

[21] Electrostatic Discharge Performance of GaN-Based Light Emitting Diodes with Naturally Textured p-GaN Layers Grown on Vicinal Sapphires
Liu, Yi-Jung
Tsai, Tsung-Yuan
Yen, Chih-Hung
Chen, Li-Yang
Tsai, Tsung-Han
Huang, Chien-Chang
Chen, Tai-You
Hsu, Chi-Shiang
Liu, Wen-Chau
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) : H406 - H408
[22] Electron leakage effects on GaN-based light-emitting diodes
Joachim Piprek
Simon Li
Optical and Quantum Electronics, 2010, 42 : 89 - 95
[23] Brightness of blue GaN-based light-emitting diodes
Grushko, N. S.
Lakalin, A. V.
Solonin, A. P.
INORGANIC MATERIALS, 2008, 44 (02) : 139 - 141
[24] Brightness of blue GaN-based light-emitting diodes
N. S. Grushko
A. V. Lakalin
A. P. Solonin
Inorganic Materials, 2008, 44 : 139 - 141
[25] Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles
Liou, Jian-Kai
Liu, Yi-Jing
Cheng, Shiou-Ying
Chou, Po-Cheng
Chen, Chiun-Chia
Liu, Wen-Chau
FRONTIER OF NANOSCIENCE AND TECHNOLOGY, 2011, 694 : 842 - +
[26] Simulation of GaN-Based Light-Emitting Diodes With Hemisphere Patterned Sapphire Substrate Based on Poynting Vector Analysis
Xia, Chang Sheng
Sheng, Yang
Li, Z. M. Simon
Cheng, Liwen
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (05) : 1 - 5
[27] Current spreading in GaN-based light-emitting diodes
Li, Qiang
Li, Yufeng
Zhang, Minyan
Ding, Wen
Yun, Feng
CHINESE PHYSICS B, 2016, 25 (11)
[28] Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template
Lin, Shan
Cao, Haicheng
Li, Jing
Sun, Xuejiao
Xiu, Huixin
Zhao, Lixia
APPLIED PHYSICS EXPRESS, 2018, 11 (12)
[29] Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm
Cao, XA
Yan, CH
D'Evelyn, MP
LeBoeuf, SF
Kretchmer, JW
Klinger, R
Arthur, SD
Merfeld, DW
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) : 242 - 248
[30] Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)
Zhu, Y. H.
Zhang, J. C.
Chen, Z. T.
Egawa, T.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

← 1 2 3 4 5 →