High Coercivity FePtSiN Films With L10-FePt Nanoparticles Embedded in a Si-Rich Matrix
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作者:
Ma, Lei
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Ma, Lei
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Liu, Z. W.
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Liu, Z. W.
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Yu, H. Y.
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Yu, H. Y.
[1
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Zhong, X. C.
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zhong, X. C.
[1
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Zeng, Y. P.
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zeng, Y. P.
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Zeng, D. C.
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zeng, D. C.
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Zhong, X. P.
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S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zhong, X. P.
[1
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机构:
[1] S China Univ Technol, Dept Metall Mat Sci & Engn, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
FePtSiN films consisting of FePt nanoparticles embedded in Si-rich matrix were fabricated on silicon substrates by direct current (dc) reactive magnetron sputtering followed by vacuum annealing. The effects of Si-N additions and annealing temperature on the structure and magnetic properties were investigated. The as-deposited films had face-centered cubic (fcc) structure, which transforms into the face centered tetragonal (fct) structure after thermal annealing at 600 degrees C. The grain size of FePt increased with the annealing temperature but decreased with increasing Si-N content. Increasing Si content led to the formation of Si-N-rich amorphous phase distributed between the FePt nanograins, which reduced the lattice distortion and increased the coercivity. The fct-FePt films annealed at 700 degrees C exhibited very high coercivity, up to 13.6 kOe at room temperature and about 17.5 kOe at 100 K. These FePtSiN films have shown promise for high-density magnetic recording medium.
机构:
Iowa State Univ, Ames Lab, Ames, IA 50011 USA
Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USAUniv Texas Arlington, Dept Phys, Arlington, TX 76019 USA
Wu, Y. Q.
Kramer, M. J.
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Iowa State Univ, Ames Lab, Ames, IA 50011 USA
Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USAUniv Texas Arlington, Dept Phys, Arlington, TX 76019 USA
机构:
Max Planck Inst Met Res, D-70569 Stuttgart, GermanyMax Planck Inst Met Res, D-70569 Stuttgart, Germany
Bublat, T.
Goll, D.
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Max Planck Inst Met Res, D-70569 Stuttgart, Germany
Aalen Univ, Mat Res Inst, D-73430 Aalen, GermanyMax Planck Inst Met Res, D-70569 Stuttgart, Germany