Towards printable organic thin film transistor based flash memory devices

被引:130
作者
Leong, Wei Lin [1 ]
Mathews, Nripan [1 ]
Tan, Bertha [2 ]
Vaidyanathan, Subramanian [2 ]
Doetz, Florian [2 ]
Mhaisalkar, Subodh [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] BASF Global Res Ctr Singapore, Singapore 112575, Singapore
关键词
FIELD-EFFECT TRANSISTORS; CHARGE-STORAGE; GOLD NANOPARTICLES; GATE; POLYMER; SILICON; HYSTERESIS; CELLS; LAYER;
D O I
10.1039/c0jm03974h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The implementation of plastic electronic solutions to large area displays, disposable sensor arrays, radio-frequency identification tags (RFIDs), and various smart packaging devices necessitate the development of organic memories that are solution-processable and readily integrated with the transistors for digital logic. This article highlights recent research progress made towards organic memory transistors based on charge trapping and focuses on the principles and materials (namely, nanoparticles and polymer electrets) for these devices. The challenges and prospects of charge trapping memories are also discussed.
引用
收藏
页码:5203 / 5214
页数:12
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