High energy irradiation effects on AlGaN/GaN HFET devices

被引：7

作者：

Sonia, G.

Richter, E.

Brunner, F.

Denker, A.

Lossy, R.

Lenk, F.

Opitz-Coutureau, J.

Mai, M.

Schmidt, J.

Zeimer, U.

Wang, L.

Baskar, K.

Weyers, M.

Wuerfl, J.

Traenkle, G.

机构：

[1] Ferdinand Braun Inst Hoechstfrequenztechn, D-12489 Berlin, Germany

[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India

[3] Hahn Meitner Inst Berlin GmbH, Ionenstrahllabor, D-14109 Berlin, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 11期

关键词：

D O I：

10.1088/0268-1242/22/11/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 x 10(7) to 1 x 10(13) cm(-2). Before and after irradiation, dc and pulsed I-V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 x 10(10) cm(-2) in the device characteristics. The device results are correlated with the thick GaN

引用

页码：1220 / 1224

页数：5

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