Piezoelectrically activated silicon resonators

被引：11

作者：

Baborowski, J. ^{[1
]}

Bourgeois, C. ^{[1
]}

Pezous, A. ^{[1
]}

Muller, C. ^{[1
]}

Dubois, M. -A. ^{[1
]}

机构：

[1] CSEM SA, Microelect Div, Neuchatel, Switzerland

来源：

PROCEEDINGS OF THE 2007 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM-JOINTLY WITH THE 21ST EUROPEAN FREQUENCY AND TIME FORUM, VOLS 1-4 | 2007年

关键词：

D O I：

10.1109/FREQ.2007.4319269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the feasibility and performances of two families of AlN/Si resonators: 1 MHz extensional and 20 to 100 kHz flexural resonators. In both components the resonating structure is obtained with SOI silicon suspended beams driven by an AlN piezoelectric layer. The 1MHz resonator exhibits a Q factor larger than 100 000 under vacuum and a coupling coefficient of 0.06%. The 20 to 100kHz resonators exhibit extremely low thermal drift of resonant frequency (a close to zero). The thermal compensation has been obtained at device-level by using SiO2 with an appropriate thickness.

引用

页码：1210 / 1213

页数：4

共 7 条

[1] Design of resonators for the determination of the temperature coefficients of elastic constants of monocrystalline silicon [J].