Some new applications of the scanning electron acoustic microscope for materials evaluation

被引:16
作者
Jiang, FM [1 ]
Kojima, S
Zhang, BY
Yin, QR
机构
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 5B期
关键词
residual stress; ferroelectric; domains; dislocation; scanning electron acoustic microscope;
D O I
10.1143/JJAP.37.3128
中图分类号
O59 [应用物理学];
学科分类号
摘要
Several different kinds or materials were investigated by an improved scanning electron acoustic microscope (SEAM). Residual stress distribution in aluminum metal and whisker-reinforced Al2O3-SiCw ceramic induced by Vicker's indentation, domain structures in a ferroelectric Bi4Ti3O12 single crystal, dislocations and defects in the hetero-structure GaAs/GaAlAs epitaxial multilayer were successfully observed. Alternative contrast mechanisms were discussed. The advantages of the scanning electron acoustic microscope for materials evaluation were demonstrated.
引用
收藏
页码:3128 / 3131
页数:4
相关论文
共 14 条
[1]  
BALK LJ, 1988, ADV ELECT ELECT PHYS, V71
[2]   THERMAL-WAVE MICROSCOPY WITH ELECTRON-BEAMS [J].
BRANDIS, E ;
ROSENCWAIG, A .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :98-100
[3]  
CARGILL GS, 1980, NATURE, V286, P69
[4]   THE RESPONSE OF SOLIDS TO ELASTIC PLASTIC INDENTATION .2. FRACTURE INITIATION [J].
CHIANG, SS ;
MARSHALL, DB ;
EVANS, AG .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :312-317
[5]   DIRECT OBSERVATION AND ANALYSIS OF INDENTATION CRACKING IN GLASSES AND CERAMICS [J].
COOK, RF ;
PHARR, GM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (04) :787-817
[6]  
JIANG FM, 1997, FERROELECTRICS, V196, P229
[7]  
KASAI M, 1990, SPRINGER SERIES OPTI, V62, P33
[8]  
LI YZ, 1990, J MECH PHYS SOLIDS, V38, P255, DOI 10.1016/0022-5096(90)90036-4
[9]  
Qian MG., 1995, Chinese J Rock Mech Eng, V14, P97
[10]   CRACK IMAGING IN ALUMINA - A SCANNING ACOUSTIC MICROSCOPE STUDY [J].
SMITH, GC ;
GEE, MG .
SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :55-63