Star-shaped oligothiophenes for solution-processible organic field-effect transistors

被引:182
作者
Ponomarenko, SA
Kirchmeyer, S
Elschner, A
Huisman, BH
Karbach, A
Drechsler, D
机构
[1] Res Elect Chem, Cent Res & Dev Div, D-51368 Leverkusen, Germany
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[3] Bayer Ind Serv Analyt, D-47829 Krefeld, Germany
关键词
D O I
10.1002/adfm.200304363
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have designed and successfully synthesized star-shaped oligothiophenes, which could be used as semiconducting materials for solution-processible organic field-effect transistors (FETs). By systematically changing the chemical structure of the star-shaped oligothiophenes we obtained the structural requirements needed for making working FETs from them. UV-vis fluorescence measurements showed that a molecule of the star-shaped compound under consideration is not a fully conjugated molecule, but it has three independently conjugated oligothienyl-phenylene blocks. A possible scheme of molecular packing of the star-shaped oligothiophenes in a lamellar structure was proposed and confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. Although the star-shaped semiconductors show a somewhat lower mobility than their linear analogs, they possess better solubility and film-forming properties, leading to improved spin-coating processing. The best FETs were made by spin-coating 1,3,5-tris(5"-decyl-2,2':5',2"-terthien-5-yl)benzene from a chloroform solution, <LF>which resulted in a mobility of 2x10(-4) cm(2)V(-1)s(-1), a 10(2) on/off ratio at gate <LF>voltages of 0 V and -20 V, and a threshold voltage close to 0 V.
引用
收藏
页码:591 / 596
页数:6
相关论文
共 44 条
[1]   New air-stable n-channel organic thin film transistors [J].
Bao, ZA ;
Lovinger, AJ ;
Brown, J .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208
[2]   END-CAPPED OLIGOTHIOPHENES - NEW MODEL COMPOUNDS FOR POLYTHIOPHENES [J].
BAUERLE, P .
ADVANCED MATERIALS, 1992, 4 (02) :102-107
[3]   ATOMIC FORCE MICROSCOPE [J].
BINNIG, G ;
QUATE, CF ;
GERBER, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933
[4]   Precursor route pentacene metal-insulator-semiconductor field-effect transistors [J].
Brown, AR ;
Pomp, A ;
deLeeuw, DM ;
Klaassen, DBM ;
Havinga, EE ;
Herwig, P ;
Mullen, K .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (04) :2136-2138
[5]  
CARPITA A, 1985, GAZZ CHIM ITAL, V115, P575
[6]  
Cherioux F, 1998, ADV MATER, V10, P1013, DOI 10.1002/(SICI)1521-4095(199809)10:13<1013::AID-ADMA1013>3.0.CO
[7]  
2-K
[8]  
Cherioux F, 2001, ADV FUNCT MATER, V11, P305, DOI 10.1002/1616-3028(200108)11:4<305::AID-ADFM305>3.0.CO
[9]  
2-Y
[10]   Synthesis and electrochemical properties of new star-shaped thiophene oligomers and their polymers [J].
Cherioux, F ;
Guyard, L ;
Audebert, P .
CHEMICAL COMMUNICATIONS, 1998, (20) :2225-2226