Microscopic analysis of current-induced domain conversion phenomena on Si(001) vicinal surface

被引：4

作者：

Ohmi, H ^{[1
]}

Ihara, N ^{[1
]}

Wada, K ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Sci, Div Phys, Kita Ku, Sapporo, Hokkaido 0600810, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 07期

关键词：

Si(001)2x1; domain conversion; path probability method; electromigration; Schwoebel effect; surface migration; step stability;

D O I：

10.1143/JJAP.37.4115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microscopic mechanism of the current-induced domain conversion phenomena on the Si(001) vicinal surface is studied by taking account of the stability of two types of steps. In the migration process of atoms our model takes four effects into account: the anisotropic migration of the Si(001) reconstructed surface, the anisotropy of the lateral bond between atoms, the electromigration effect and the Schwoebel effect. The kinetic equations for the time evolution of the Si(001) vicinal surface are derived using the pair approximation of the path probability method (PPM), a non-equilibrium statistical method. Our model explains not only the domain conversion phenomena but also the difference in the step structures observed in some experiments. Based on the microscopic kinetics of atoms, the mechanism of the domain conversion is discussed. The results of the PPM calculation are in quantitatively good agreement with those of the Monte Carlo simulation carried out simultaneously by us.

引用

页码：4115 / 4123

页数：9

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