Uniformity improvement in SiC epitaxial growth by horizontal hot-wall CVD

被引：0
|
作者：
Saitoh, H [1 ]
Kimoto, T
Matsunami, H
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[2] Toyota Motor Co Ltd, Mat Engn Div 3, Shizuoka 4101193, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
gas flow analysis; homoepitaxial growth; hot-wall CVD; uniformity;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Uniformity in SiC homoepitaxial growth by horizontal hot-wall CVD was investigated. By controlling hydrogen carrier gas and improving susceptor design, a low sigma/m value of 2.3% in thickness uniformity was obtained on a 35 mm wafer with 2 mm-edge exclusion. Doping uniformity was sensitive mainly to growth pressure.
引用
收藏
页码：185 / 188
页数：4
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