Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars

被引：73

作者：

Walavalkar, Sameer S. ^{[1
,2
]}

Hofmann, Carrie E. ^{[1
,2
]}

Homyk, Andrew P. ^{[1
,2
]}

Henry, M. David ^{[1
,2
]}

Atwater, Harry A. ^{[1
,2
]}

Scherer, Axel ^{[1
,2
]}

机构：

[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA

[2] CALTECH, Kavli Nanosci Inst, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 11期

关键词：

Silicon nanowires; plasma etching; photoluminescence; quantum effects; strain induced behavior; SILICON; PHOTOLUMINESCENCE; LUMINESCENCE; OXIDATION;

D O I：

10.1021/nl102140k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Visible and near-IR photoluminescence (PL) is reported from sub-10 nm silicon nanopillars. Pillars were plasma etched from single crystal Si wafers and thinned by utilizing strain-induced, self-terminating oxidation of cylindrical structures. PL, lifetime. and transmission electron microscopy were performed to measure the dimensions and emission characteristics of the pillars. The peak PL energy was found to blue shift with narrowing pillar diameter in accordance with a quantum confinement effect. The blue shift was quantified using a tight binding method simulation that incorporated the strain induced by the thermal oxidation process. These pillars show promise as possible complementary metal oxide semiconductor compatible silicon devices in the form of light-emitting diode or laser structures.

引用

页码：4423 / 4428

页数：6

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