On the role of Pb in epitaxial growth of thin Co films on Cu(111)

被引:13
作者
Mroz, S [1 ]
Otop, H [1 ]
Jankowski, Z [1 ]
机构
[1] Univ Wroclaw, Inst Phys Expt, PL-50204 Wroclaw, Poland
关键词
Auger electron spectroscopy; cobalt; copper; directional elastic peak electron spectroscopy; lead; low index single crystal surfaces; single crystal epitaxy;
D O I
10.1016/S0039-6028(97)00970-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cobalt layers were deposited at room temperature in UHV on the Cu(111) face clean and precovered with Pb. The role of Pb in the epitaxial growth of Co film was investigated with the use of combined Auger electron spectroscopy and directional elastic peak electron spectroscopy (DEPES). It has been found that the crystalline structure of Co layers is, for coverages up to 5 ML, insensitive to the precovering with lead. DEPES profiles for Co layers indicate the continuation of the stacking sequence of the fcc substrate structure. However, the presence of lead improves this structure. Namely, the contrast of particular maxima in DEPES profiles is maintained constant up to 1 ML and 2.5 ML of cobalt deposited on the Cu substrate clean and precovered with 1 ML of Pb, respectively. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:263 / 267
页数:5
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