The current transport mechanism of Al/Beetroot/Cu used as an organic semiconductor Schottky diode is superior than natural dye-based thin film devices

The development and characterization of an organic thin-film diode based on herbal dyes has been presented. The electronic parameters of the diode are retrieved using a thermionic emission approach from the I-V characteristics. Furthermore, the computed values of ideality factor (n), barrier height (phi) and series resistance (R-s) of Al/Beetroot/Cu using the Cheung and Cheung functions are 4.5, 0.73 eV and 1.10 K omega, respectively. The values of R-s in these two different approaches are very similar, but a discrepancy in values of n confirms the existence of high R-s and high interface state density. The band gap of betanin and temperature dependence of n,phi, and R-s confirm the semiconducting behaviour of beet root. We observed a linear relationship between phi and 1/n for Al/ Beetroot/Cu, confirming that the device is a Schottky diode. The fact that quantum tunneling plays a significant role in the charge conduction procedure with thermionic emission is confirmed by the parabolic conductance of Al/Beetroot/Cu. We have identified that Schottky emission dominates Poole-Frenkle emission for the Al/Beetroot/Cu diode based on both theoretical and experimental values of beta. The G(V) vs V plot was used to explain the existence of the reported dye's trapping effect. We also calculated the device's trap energy (E-c), which is substantially lower than previously reported organic diodes. The theoretically estimated value of the insulating temperature for Al/Beetroot/Cu is 133 K. When we utilise beetroot dye instead of indigo dye, the value of n and R-s decreases from 11.65 to 4.5 and 430 K omega to 1.1 K omega, respectively, according to the comparison analysis. The trap energy drops from 0.0732 to 0.021 eV once more.