Strained VO2 Nanostructure Thin Films with an Unaffected Insulator-Metal Transition

被引:1
作者
Huang, Tiantian [1 ,2 ]
Wang, Shuxia [1 ,2 ]
Wei, Wei [1 ,2 ]
Yang, Yan [1 ]
Yang, Wanli [1 ]
Yuan, Menghui [1 ]
Zhang, Rui [1 ]
Zhang, Tianning [1 ]
Chen, Xiren [1 ]
Sun, Yan [1 ]
Zhou, Xiaohao [1 ]
Shao, Jun [1 ,2 ]
Chen, Xin [1 ,2 ]
Dai, Ning [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2020年 / 257卷 / 06期
基金
国家重点研发计划;
关键词
interplanar placing; metal-insulator transition; Raman spectra; vibration modes; vanadium dioxide; MOTT TRANSITION; SURFACE; LAYER; FIELD; CRYSTALLIZATION; DOMAINS; DRIVEN; CHARGE;
D O I
10.1002/pssb.201900785
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Insulator-metal transition (IMT) brings some fantastic physical changes and accompanies structure phase transition (SPT) in correlated vanadium dioxide (VO2) materials. It is still in dispute whether the electron-phonon interaction induced by the lattice deformation or the electron-electron correlation drives the IMT transition. An alternative and challenging way to understand the mechanism is to separate SPT from IMT in VO2. Understanding and manipulating strain and defect in VO2 is important to regulate the IMT behavior. Herein, strained VO2 nanostructure thin films with unaffected IMT behavior are presented. The shifted phonon modes and the decreased interplanar spacing indicate the presence of the in-plane strain in VO2 nanostructure thin films. Such structural strains do not affect the transition temperature but provide a platform for the light modulation. It is believed that the unaffected IMT is beneficial for in-depth understanding of the IMT and SPT behaviors in VO2 and even the creation of advanced electronic devices.
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页数:5
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