Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential

被引：34

作者：

Li, YM ^{[1
]}

Tang, TW

Wang, XL

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

[3] Univ Massachusetts, Dept Elect & Comp Engn, Amherst, MA 01003 USA

[4] IBM Corp, Device & Proc Modeling Grp, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2002年 / 1卷 / 04期

关键词：

effective potential; modeling and simulation; MOS devices; quantum effect; Schrodinger-Poisson;

D O I：

10.1109/TNANO.2002.807386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the effectiveness of the effective potential (EP) method for modeling quantum effects in ultrathin oxide MOS structures is investigated. The inversion-layer charge density and MOS capacitance in one-dimensional MOS structures are simulated with various substrate doping profiles and gate bias voltages. The effective mass is used as an adjusting parameter to compare results of the EP model with that of the Schrodinger-Poisson solution. The variation of this optimum parameter for various doping profiles at different gate voltages is investigated. The overestimated average inverse charge depth by the EP method is quantified and its reason explained. The EP model is a good practical simulation tool for modeling quantum effects but more work needs to be done to improve its accuracy near the interface.

引用

页码：238 / 242

页数：5

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