Optimization of etching and stripping chemistries for Z3MS™ low-k

被引：12

作者：

Lepage, M ^{[1
]}

Shamiryan, D ^{[1
]}

Baklanov, M ^{[1
]}

Struyf, H ^{[1
]}

Mannaert, G ^{[1
]}

Vanhaelemeersch, S ^{[1
]}

Weidner, K ^{[1
]}

Meynen, H ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-Oxy-Carbide (SiOC) materials are used as low-k materials for the 2.7-k generation, They can be etched with the fluorinated chemistries used for oxide but some optimizations are needed to achieve acceptable etch-rates and good selectivities. The resist strip is also very sensitive and requires even more development to keep the material properties intact after full damascene integration. Oxygen is useful but it can also cause severe damage. AU experiments described in this paper were performed on Z3MS (TM) Low-k (*).

引用

页码：174 / 176

页数：3

共 3 条

[1] Low temperature oxidation and selective etching of chemical vapor deposition a-SiC:H films [J].