Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM)

被引：22

作者：

Inoue, N ^{[1
]}

Hayashi, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Kanagawa 2291198, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 10期

关键词：

ferroelectric memories; imprint; modeling; PLZT; PZT; reliability estimation;

D O I：

10.1109/16.954465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the imprint on the operation of the ferroelectric random access memory (FeRAM) was estimated by a quasitheoretical model, including the hysteresis shift along the voltage axis and the depolarization induced by the hysteresis shift. Based on the experimental data of the imprint up to 90 days, the hysteresis shift and the depolarization are expressed by a stretched exponential equation as the aging time, and a hyperbolic tangent as the shifted voltage, respectively. Using this model, nonlinear phenomena of bit-Une voltage change with the aging time is successfully predicted, and the aging reliability for two transistor and two capacitor (2T/2C) cell architecture with the imprinted capacitors is estimated for the first time. This technique Is applied to the evaluation of aging reliability for the Pb(ZrTi)O-3 and (Pb,La)(ZrTi)O-3 capacitors, revealing that the latter has higher reliability than the former.

引用

页码：2266 / 2272

页数：7

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