Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1-xMgxO buffer layers

被引：70

作者：

Pettersson, J. ^{[1
]}

Platzer-Bjorkman, C. ^{[1
]}

Zimmermann, U. ^{[1
]}

Edoff, M. ^{[1
]}

机构：

[1] Uppsala Univ, Angstrom Solar Ctr, SE-75121 Uppsala, Sweden

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

Electrical modelling; CIGS solar cells; Buffer layers; Graded absorber; Light soaking; Metastabilities; CUINSE2;

D O I：

10.1016/j.tsf.2010.12.141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A baseline parameter set for electrical modelling of Cu(In,Ca)Se-2 solar cells with compositionally graded absorber and CdS buffer layer is established. The cases with and without Fermi level pinning as well as with and without a surface defect layer are considered. Simulations with a defect layer are observed to give the best correspondence to measurements. Zn1-xMgxO buffer layers are introduced and initial modelling of the light soaking behaviour is performed. Simulation results are compared with experimental data. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7476 / 7480

页数：5

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