Design of GaN HEMT based Doherty Power Amplifier for 5G Applications

被引：0

作者：

Adish ^{[1
]}

Jayaram, Chaman ^{[1
]}

Shanthi, P. ^{[1
]}

机构：

[1] RV Coll Engn, Dept Elect & Telecommun, Bangalore, Karnataka, India

来源：

2021 IEEE INTERNATIONAL CONFERENCE ON MOBILE NETWORKS AND WIRELESS COMMUNICATIONS (ICMNWC) | 2021年

关键词：

Broadband; Doherty power amplifier; GaN HEMT; High efficiency amplifier; Power Amplifier;

D O I：

10.1109/ICMNWC52512.2021.9688386

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

Due to the upcoming 5G technology there is a wide demand in the wireless sector for power amplifier who can work at such frequencies one of the topologies in power amplifier making is a Doherty Amplifier. This approach makes use of Class-AB and Class-C amplifiers in parallel, and growth within the performance mainly at back-off areas occurs. By the usage of the parallel configuration, the P1 dB factor is improved. The following paper demonstrates the layout and simulation of a DPA working in broadband configuration for 2.8-4 GHz. using CREE CGH40010F GaN HEMT technology-based transistor, which uses a lambda/4 impedance inverter along with a carrier power amplifier, which keeps the impedance at the output of the carrier amplifier to 25 Omega. The overall performance of the 2.8-4 GHz unsymmetrical Doherty amplifier exhibits a gain of 11dB for the complete band; additionally, the drain efficiency performance for the center frequency turned out to be 61%. These simulated effects carefully maintain the ones calculated with the aid of using layout calculations and exhibit the model's effectiveness.

引用

页数：5

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