Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation

被引：13
作者：
Barinov, SM
Ferro, D
Bartuli, C
D'Alessio, L
机构：
[1] Russian Acad Sci, Inst Phys Chem Ceram, Moscow 119361, Russia
[2] CNR, Ctr Termodinam Chim Alte Temp, I-00185 Rome, Italy
[3] Univ Roma La Sapienza, I-00185 Rome, Italy
[4] Univ Basilicata, I-85100 Potenza, Italy
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 16期
关键词：
D O I：
10.1023/A:1017970212233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation was investigated. The films were deposited on polished silicon (100) substrates using a pulsed laser ablation deposition (PLAD) apparatus. Hardness of HfC was found to be lower than that of TiC. This was attributed to the difference in the density of electron states at the fermi surface in TiC and HfC.
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页码：1485 / 1487
页数：3
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