Analytic investigation on the threshold voltage of fully-depleted surrounding-gate metal-oxide-semiconductor field-effect transistors

被引：7
作者：
Hu, Guang-Xi [1 ]
Liu, Ran
Tang, Ting-Ao
Wang, Ling-Li
机构：
[1] Fudan Univ, Applicat Specif Integrated Circuit & Syst State K, Shanghai 200433, Peoples R China
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 52卷 / 06期
关键词：
MOSFETs; semiconductor devices; transistors;
D O I：
10.3938/jkps.52.1909
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Analytic solutions for the surrounding-gate (SG) metal-oxide-semiconductor field-effect transistor (MOSFET) are obtained by solving Poisson's equation. The analytic expressions for the electric potential and the threshold voltage are obtained by taking into account the short-channel effects. Our analytic results fit with other numerical and simulated results quite well. The analytic expressions will be of great help in ultralarge-scale integrated-circuit (ULSI) design.
引用
收藏
页码：1909 / 1912
页数：4
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