Graphene oxide mode-locked Yb:GAGG bulk laser operating in the femtosecond regime

被引：12

作者：

Cui, Liang ^{[1
]}

Lou, Fei ^{[2
]}

Li, Yan-bin ^{[2
]}

Hou, Jia ^{[2
]}

He, Jing-Liang ^{[2
]}

Jia, Zhi-Tai ^{[2
]}

Liu, Jing-Quan ^{[1
]}

Zhang, Bai-Tao ^{[2
]}

Yang, Ke-Jian ^{[2
]}

Wang, Zhao-Wei ^{[2
]}

Tao, Xu-Tang ^{[2
]}

机构：

[1] Qingdao Univ, Growing Base State Key Lab, Lab Fiber Mat & Modem Text, Qingdao 266071, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

OPTICAL MATERIALS | 2015年 / 42卷

基金：

中国国家自然科学基金;

关键词：

Graphene oxide; Passively mode locked; Femtosecond; Bulk laser; ORGANIC PHOTOVOLTAIC DEVICES; EFFICIENCY; DISPERSION; ABSORBERS; STABILITY; FILMS;

D O I：

10.1016/j.optmat.2015.01.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality graphene oxide saturable absorber (SA) is successfully fabricated with 1-2 layer graphene oxide. By employing this SA, we have demonstrated femtosecond pulse generation from a graphene oxide passively mode locked bulk laser for the first time to our best knowledge. With two Gires-Tournois interferometer mirrors for dispersion compensation, pulses as short as 493 fs with an average power of 500 mW are obtained at the central wavelength of 1035.5 nm. These results presented here indicate the great potential of GO for generating femtosecond mode-locked pulses in the bulk laser. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：309 / 312

页数：4

共 40 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[3] Self-Assembled Free-Standing Graphite Oxide Membrane [J].

Chen, Chengmeng ;

Yang, Quan-Hong ;

Yang, Yonggang ;

Lv, Wei ;

Wen, Yuefang ;

Hou, Peng-Xiang ;

Wang, Maozhang ;

Cheng, Hui-Ming .

ADVANCED MATERIALS, 2009, 21 (29) :3007-3011

[4] Graphene mode-locked femtosecond Cr:ZnSe laser at 2500 nm [J].

Cizmeciyan, M. N. ;

Kim, J. W. ;

Bae, S. ;

Hong, B. H. ;

Rotermund, F. ;

Sennaroglu, A. .

OPTICS LETTERS, 2013, 38 (03) :341-343

[5] Layer-by-Layer Removal of Graphene for Device Patterning [J].

Dimiev, Ayrat ;

Kosynkin, Dmitry V. ;

Sinitskii, Alexander ;

Slesarev, Alexander ;

Sun, Zhengzong ;

Tour, James M. .

SCIENCE, 2011, 331 (6021) :1168-1172

[6] 3 W high-power laser passively mode-locked by graphene oxide saturable absorber [J].

Feng, Chao ;

Wang, Yonggang ;

Liu, Jie ;

Tsang, Yuen H. ;

Song, Yanrong ;

Yu, Zhenhua .

OPTICS COMMUNICATIONS, 2013, 298 :168-170

[7] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[8] Graphene: Status and Prospects [J].

Geim, A. K. .

SCIENCE, 2009, 324 (5934) :1530-1534

[9] Electronic transport properties of individual chemically reduced graphene oxide sheets [J].

Gomez-Navarro, Cristina ;

Weitz, R. Thomas ;

Bittner, Alexander M. ;

Scolari, Matteo ;

Mews, Alf ;

Burghard, Marko ;

Kern, Klaus .

NANO LETTERS, 2007, 7 (11) :3499-3503

[10]

Haiml M, 2004, APPL PHYS B-LASERS O, V79, P331, DOI [10.1007/s00340-004-1535-1, 10.1007/S00340-004-1535-1]

← 1 2 3 4 →