Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors

被引：24

作者：

Hwang, Yoontae ^{[1
]}

Chobpattana, Varistha ^{[1
]}

Zhang, Jack Y. ^{[1
]}

LeBeau, James M. ^{[2
]}

Engel-Herbert, Roman ^{[3
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 14期

关键词：

D O I：

10.1063/1.3575569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to similar to 5 nm physical thickness. Metal-oxide-semiconductor capacitors (MOSCAPs) with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3575569]

引用

页数：3

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