3-TFT pixel circuit employing a fraction time annealing to improve a current stability of a-Si:H TFT AMOLED

被引：0
|
作者：
Lee, J. H. [1 ]
Nam, W. J. [1 ]
Shin, H. S. [1 ]
Han, M. K. [1 ]
机构：
[1] Seoul Natl Univ, Sch Elect Engn, Seoul, South Korea
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have proposed and fabricated 3-TFT pixel circuit employing a fraction time annealing to improve a current stability for a-Si:H TFT based AMOLED backplane. The measurement results, after an electrical bias and temperature (60 degrees C) stress of 12 hours, show that OLED current is decreased by 23% in conventional 2-TFT pixel, while decreased by 6% in the proposed 3-TFT pixel because a negative bias can reduce V(TH) degradation of a-Si:H TFT itself.
引用
收藏
页码：667 / 668
页数：2
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