Driving force for Sn whisker growth in the system Cu-Sn

被引：89
作者：
Sobiech, M. [1 ,2 ]
Welzel, U. [1 ]
Mittemeijer, E. J. [1 ]
Huegel, W. [2 ]
Seekamp, A. [2 ]
机构：
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Robert Bosch GmbH, D-72770 Reutlingen, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 01期
关键词：
D O I：
10.1063/1.2953973
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The evolution of residual stress gradients in Sn thin films on Cu substrates upon aging at ambient temperature has been investigated, for specimens which do exhibit and which do not exhibit Sri whisker growth, by performing x-ray diffraction stress measurements at constant penetration depths. Comparison of the measured near-surface stress-depth profiles for both types of specimens, as function of aging time at ambient temperature, showed that a significant negative stress gradient from the surface toward the Sn/Cu interface is decisive for Sn whisker growth in the system Cu-Sn. (c) 2008 American Institute of Physics.
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