The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

被引：8

作者：

Gu, Wenping ^{[1
]}

Hao, Yue ^{[1
]}

Yang, Lin'an ^{[1
]}

Duan, Chao ^{[1
]}

Duan, Huantao ^{[1
]}

Zhang, Jincheng ^{[1
]}

Ma, Xiaohua ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, 2 S TaiBai Rd, Xian 710071, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlGaN/GaN; HEMTs; neutron irradiation; electrical properties; ohmic contacts; Schottky contacts; N-GAN; DEFECTS;

D O I：

10.1002/pssc.200983602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The SiN-passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 10(15) cm(-2), yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current at fluences ranging from 10(14) to 10(15) cm(-2) which could be attributed to the irradiation induced mobility shift and the defects in SiN passivation layers respectively since no any recovery was found after 20 hour annealing at room temperature. Meanwhile the negligible degradation of the saturation drain current, the maximal transconductance and the threshold voltage gave the fact that the effectiveness of SiN layers in passivated surface states in the source-gate spacer and gate-drain spacer was undiminished by neutron irradiation. Moreover the ohmic contact was robustness to neutron since the sheet resistance of ohmic contact region hardly shifted, but the schottky characteristics degraded obviously. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：6

共 15 条

[11] Effects of proton implantation on electrical and recombination properties of n-GaN [J].

Polyakov, AY ;

Usikov, AS ;

Theys, B ;

Smirnov, NB ;

Govorkov, AV ;

Jomard, F ;

Shmidt, NM ;

Lundin, WV .

SOLID-STATE ELECTRONICS, 2000, 44 (11) :1971-1983

[12] Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN/GaN heterostructures -: art. no. 033529 [J].

Polyakov, AY ;

Smirnov, NB ;

Govorkov, AV ;

Markov, AV ;

Pearton, SJ ;

Kolin, NG ;

Merkurisov, DI ;

Boiko, VM .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[13] Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging [J].

Simin, G ;

Hu, X ;

Ilinskaya, N ;

Zhang, J ;

Tarakji, A ;

Kumar, A ;

Yang, J ;

Khan, MA ;

Gaska, R ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) :53-55

[14] THERMAL-STABILITY OF IMPLANTED DOPANTS IN GAN [J].

WILSON, RG ;

PEARTON, SJ ;

ABERNATHY, CR ;

ZAVADA, JM .

APPLIED PHYSICS LETTERS, 1995, 66 (17) :2238-2240

[15] Very-high power density AlGaN/GaN HEMTs [J].

Wu, YF ;

Kapolnek, D ;

Ibbetson, JP ;

Parikh, P ;

Keller, BP ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :586-590

← 1 2 →