The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

被引：8

作者：

Gu, Wenping ^{[1
]}

Hao, Yue ^{[1
]}

Yang, Lin'an ^{[1
]}

Duan, Chao ^{[1
]}

Duan, Huantao ^{[1
]}

Zhang, Jincheng ^{[1
]}

Ma, Xiaohua ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, 2 S TaiBai Rd, Xian 710071, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlGaN/GaN; HEMTs; neutron irradiation; electrical properties; ohmic contacts; Schottky contacts; N-GAN; DEFECTS;

D O I：

10.1002/pssc.200983602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The SiN-passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 10(15) cm(-2), yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current at fluences ranging from 10(14) to 10(15) cm(-2) which could be attributed to the irradiation induced mobility shift and the defects in SiN passivation layers respectively since no any recovery was found after 20 hour annealing at room temperature. Meanwhile the negligible degradation of the saturation drain current, the maximal transconductance and the threshold voltage gave the fact that the effectiveness of SiN layers in passivated surface states in the source-gate spacer and gate-drain spacer was undiminished by neutron irradiation. Moreover the ohmic contact was robustness to neutron since the sheet resistance of ohmic contact region hardly shifted, but the schottky characteristics degraded obviously. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：6

共 15 条

[1] Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE [J].

Cai, SJ ;

Tang, YS ;

Li, R ;

Wei, YY ;

Wong, L ;

Chen, YL ;

Wang, KL ;

Chen, M ;

Zhao, YF ;

Schrimpf, RD ;

Keay, JC ;

Galloway, KF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :304-307

[2] Current instabilities in GaN-based devices [J].

Daumiller, I ;

Theron, D ;

Gaquière, C ;

Vescan, A ;

Dietrich, R ;

Wieszt, A ;

Leier, H ;

Vetury, R ;

Mishra, UK ;

Smorchkova, IP ;

Keller, S ;

Nguyen, NX ;

Nguyen, C ;

Kohn, E .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) :62-64

[3] Radiation-induced defects in n-type GaN and InN [J].

Emtsev, VV ;

Davydov, VY ;

Haller, EE ;

Klochikhin, AA ;

Kozlovskii, VV ;

Oganesyan, GA ;

Poloskin, DS ;

Shmidt, NM ;

Vekshin, VA ;

Usikov, AS .

PHYSICA B-CONDENSED MATTER, 2001, 308 :58-61

[4] Deep centers in n-GaN grown by reactive molecular beam epitaxy [J].

Fang, ZQ ;

Look, DC ;

Kim, W ;

Fan, Z ;

Botchkarev, A ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2277-2279

[5] Influence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors [J].

Gu Wen-Ping ;

Zhang Jin-Cheng ;

Wang Chong ;

Feng Qian ;

Ma Xiao-Hua ;

Hao Yue .

ACTA PHYSICA SINICA, 2009, 58 (02) :1161-1165

[6] Electrical defects introduced during high-temperature irradiation of GaN and AlGaN [J].

Hayes, M ;

Auret, FD ;

Wu, L ;

Meyer, WE ;

Nel, JM ;

Legodi, MJ .

PHYSICA B-CONDENSED MATTER, 2003, 340 :421-425

[7] Optical detection of magnetic resonance in electron-irradiated GaN [J].

Linde, M ;

Uftring, SJ ;

Watkins, GD ;

Harle, V ;

Scholz, F .

PHYSICAL REVIEW B, 1997, 55 (16) :10177-10180

[8] Defect donor and acceptor in GaN [J].

Look, DC ;

Reynolds, DC ;

Hemsky, JW ;

Sizelove, JR ;

Jones, RL ;

Molnar, RJ .

PHYSICAL REVIEW LETTERS, 1997, 79 (12) :2273-2276

[9] Temperature dependent electrical characteristics of neutron irradiated AlGaN/GaN HFETs [J].

McClory, John W. ;

Petrosky, James C. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :1969-1974

[10]

Mishra UK, 2001, IEEE T ELECTRON DEV, V48, P405

← 1 2 →