Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/CaAs quantum dots

被引：6

作者：

Saint-Girons, G ^{[1
]}

Mereuta, A ^{[1
]}

Patriarche, G ^{[1
]}

Gérard, JM ^{[1
]}

Sagnes, I ^{[1
]}

机构：

[1] CNRS, URA 250, FT R&D, F-92220 Bagneux, France

来源：

OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期

关键词：

quantum dots; MOVPE; GaAs; thermal treatment;

D O I：

10.1016/S0925-3467(01)00089-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical and structural properties of a single array of 1.3 mum emitting quantum dots (QDs) grown by LP-MOVPE are presented after different thermal treatments (between 570 degreesC and 670 degreesC under arsine flux during 25 min) simulating the overgrowth of the confinement layers for broad area lasers. The photoluminescence (PL) efficiency of the 1.3 mum line is not affected by a thermal treatment below 620 degreesC. Nevertheless, a drastic decrease of the 1.3 mum peak intensity occurs for higher anneal temperature (670 degreesC), together with an important blueshift of the PL spectrum (approximate to 40 meV). The structural modifications of the QDs were studied by TEM, showing an important In/Ga intermixing during the thermal treatment. A low thermal budget (< 620 degreesC) during the growth is clearly required to avoid the PL spectrum blueshift. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 266

页数：4

共 8 条

[1] Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition [J].