Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(1 1 1): Effects of thermal annealing

被引：30
作者：
Lupan, O. [1 ]
Pauporte, Th [1 ]
Tiginyanu, I. M. [2 ]
Ursaki, V. V. [2 ]
Heinrich, H. [3 ]
Chow, L. [3 ]
机构：
[1] Chim ParisTech, UMR CNRS 7575, LECIME, F-75231 Paris, France
[2] Moldavian Acad Sci, Inst Appl Phys, Inst Elect Engn & Nanotechnol, MD-2028 Kishinev, Moldova
[3] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2011年 / 176卷 / 16期
关键词：
ZnO nanowires; Electrodeposition; Photoluminescence; Annealing; Electrolyte-Si junction; ZnO/Si heterojunction; RESONANT RAMAN-SCATTERING; LIGHT-EMITTING-DIODES; HYDROGEN-PEROXIDE; THIN-FILMS; PHOTOLUMINESCENCE; GROWTH; FABRICATION; SILICON; ELECTROLUMINESCENCE; EMISSION;
D O I：
10.1016/j.mseb.2011.07.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n-Si(111) and p-Si(111). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (111) substrate are reported. We fabricated ZnO nanowires/p-Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150-800 degrees C. Photo-detectors have been fabricated based on the ZnO nanowires/p-Si heterojunction. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1277 / 1284
页数：8
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