Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer

被引：13

作者：

Song, Hooyoung ^{[1
,2
,3
]}

Suh, Jooyoung ^{[1
,2
]}

Kim, Eun Kyu ^{[1
,2
]}

Baik, Kwang Hyeon ^{[3
]}

Hwang, Sung-Min ^{[3
]}

机构：

[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

[2] Hanyang Univ, Res Inst Nat Sci, Seoul 133791, South Korea

[3] Korea Elect Technol Inst, Green Energy Res Ctr, Gyeonggi Do 463816, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

X-ray diffraction; Metal-organic chemical vapor deposition; Nitrides; Semiconducting III-V materials; VAPOR-PHASE EPITAXY; FIELDS; MOCVD;

D O I：

10.1016/j.jcrysgro.2010.08.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nonpolar (1 1-20) a-plane GaN films have been grown using the multi-buffer layer technique on (1-1 0 2) r-plane sapphire substrates. In order to obtain epitaxial a-plane GaN films, optimized growth condition of the multi-buffer layer was investigated using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy measurements. The experimental results showed that the growth conditions of nucleation layer and three-dimensional growth layer significantly affect the crystal quality of subsequently grown a-plane GaN films. At the optimized growth conditions, omega full-width at half maximum values of (11-20) X-ray rocking curve along c- and m-axes were 430 and 530 arcsec, respectively. From the results of transmission electron microscopy, it was suggested that the high crystal quality of the a-plane GaN film can be obtained from dislocation bending and annihilation by controlling of the island growth mode. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3122 / 3126

页数：5

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