Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs

被引:3
作者
Aytac, Y. [1 ,2 ]
Olson, B. V. [3 ]
Kim, J. K. [3 ]
Shaner, E. A. [3 ]
Hawkins, S. D. [3 ]
Klem, J. F. [3 ]
Flatte, M. E. [1 ,2 ]
Boggess, T. F. [1 ,2 ]
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
QUANTUM SENSING AND NANOPHOTONIC DEVICES XII | 2015年 / 9370卷
关键词
InAs/InAsSb; Lifetime; T2SLs;
D O I
10.1117/12.2077753
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Temperature dependent measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAsSb type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions a 16 K band-gap of similar to 235 +/- 10meV was achieved for four doped and five undoped T2SLs. Carrier lifetimes were determined by fitting lifetime models of Shockley-Read-Hall (SRH), radiative, and Auger recombination processes simultaneously to the temperature and excess carrier density dependent data. The contribution of each recombination process at a given temperature is identified and the total lifetime is determined over a range of excess carrier densities. The minority carrier and Auger lifetimes were observed to increase with increasing antimony content and decreasing layer thickness for the undoped T2SLs. It is hypothesized that a reduction in SRH recombination centers or a shift in the SRH defect energy relative to the T2SL band edges is the cause of this increase in the SRH minority carrier lifetime. The lower Auger coefficients are attributed to a reduced number of final Auger states in the SL samples with greater antimony content. An Auger limited minority carrier lifetime is observed for the doped T2SLs, and it is found to be a factor of ten shorter than for undoped T2SLs. The Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously reported for InAs/GaSb T2SLs.
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页数:8
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