Infrared-laser based characterization of the pyroelectricity in AlScN thin-films

被引：13

作者：

Bette, Sebastian ^{[1
]}

Fichtner, Simon ^{[2
]}

Broeker, Sebastian ^{[2
]}

Nielen, Lutz ^{[1
]}

Schmitz-Kempen, Thorsten ^{[1
]}

Wagner, Bernhard ^{[2
,3
]}

Van Buggenhout, Carl ^{[4
]}

Tiedke, Stephan ^{[1
]}

Tappertzhofen, Stefan ^{[1
]}

机构：

[1] AixACCT Syst GmbH, Talbotstr 25, D-52068 Aachen, Germany

[2] Univ Kiel, Tech Fac, Mat & Proc Nanosyst Technol, Kaiserstr 2, D-24143 Kiel, Germany

[3] Fraunhofer Inst Silicon Technol, Fraunhoferstr 1, D-25524 Itzehoe, Germany

[4] Melexis Technol NV, Transportstr 1, B-3980 Tessenderlo, Belgium

来源：

THIN SOLID FILMS | 2019年 / 692卷

关键词：

Pyroelectric; Piezoelectric; Aluminum-scandium-nitride; AlScN; INTENSITY-MODULATION METHOD; PIEZOELECTRIC PROPERTIES;

D O I：

10.1016/j.tsf.2019.137623

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A measurement system for characterization of the pyroelectricity in thin- and thick-films is introduced. The system is based on a quantum-cascade infrared laser that stimulates the temperature within the sample film with variable modulation frequencies up to 120 kHz. As model material system we choose Scandium-doped Aluminum Nitride (AlScN) due to its promising piezo- and dielectric behavior as well as CMOS compatibility. We measured the pyro-electric response and its temperature characteristics. The transverse effective piezoelectric coefficient e(31)(f) is derived from the measurement of the longitudinal effective piezoelectric modulus d(33) and we discuss the contribution of piezoelectric clamping to the measured pyroelectric response. Our findings are important for integration of AlScN films on exposed membranes for dense and sensitive infrared detectors.

引用

页数：6

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