Faulted surface layers in dysprosium silicide nanowires

被引：23
|
作者：
He, ZA [1 ]
Smith, DJ
Bennett, PA
机构：
[1] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 24期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevB.70.241402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystallography and microstructure of epitaxial dysprosium silicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750 degreesC have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650 degreesC have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.
引用
收藏
页码：1 / 4
页数：4
相关论文
共 50 条
  • [21] Synthesis and applications of metal silicide nanowires
    Schmitt, Andrew L.
    Higgins, Jeremy M.
    Szczech, Jeannine R.
    Jin, Song
    JOURNAL OF MATERIALS CHEMISTRY, 2010, 20 (02) : 223 - 235
  • [22] Manganese silicide nanowires on Si(001)
    Liu, H. J.
    Owen, J. H. G.
    Miki, K.
    Renner, Ch
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (17)
  • [23] Copper silicide nanocrystals in silicon nanowires
    Qi, JF
    Masumoto, Y
    MATERIALS RESEARCH BULLETIN, 2001, 36 (7-8) : 1407 - 1415
  • [24] Epitaxial titanium silicide islands and nanowires
    He, ZA
    Stevens, M
    Smith, DJ
    Bennett, PA
    SURFACE SCIENCE, 2003, 524 (1-3) : 148 - 156
  • [25] Hot electron transport across manganese silicide layers on the Si(001) surface
    Stollenwerk, A. J.
    Krause, M. R.
    Moore, R.
    LaBella, V. P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1610 - 1612
  • [26] Growth of high-density titanium silicide nanowires in a single direction on a silicon surface
    Hsu, Hung-Chang
    Wu, Wen-Wei
    Hsu, Hsun-Feng
    Chen, Lih-Juann
    NANO LETTERS, 2007, 7 (04) : 885 - 889
  • [27] Growth of erbium silicide nanowires on Si(001) surface studied by scanning tunneling microscopy
    Zhou, W
    Wang, SH
    Ji, T
    Zhu, Y
    Cai, Q
    Hou, XY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2059 - 2062
  • [28] Ultrathin Au layers on Si(100): surface silicide formation at room temperature
    Ceelen, WCAN
    Moest, B
    de Ridder, M
    van Ijzendoorn, LJ
    van der Gon, AWD
    Brongersma, HH
    APPLIED SURFACE SCIENCE, 1998, 134 (1-4) : 87 - 94
  • [29] Formation of ultrathin iron silicide layers on the single-crystal silicon surface
    M. V. Gomoyunova
    D. E. Malygin
    I. I. Pronin
    Physics of the Solid State, 2006, 48 : 2016 - 2020
  • [30] Formation of ultrathin iron silicide layers on the single-crystal silicon surface
    Gomoyunova, M. V.
    Malygin, D. E.
    Pronin, I. I.
    PHYSICS OF THE SOLID STATE, 2006, 48 (10) : 2016 - 2020
12345