Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact

被引：2

作者：

Kaminska, E ^{[1
]}

Piotrowska, A

Barcz, A

Reginski, K

Dluzewski, P

Kozlowski, M

Dynowska, E

机构：

[1] Inst Electron Technol, Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, Warsaw, Poland

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

ohmic contact; metal/semiconductor interface; p-GaAs;

D O I：

10.1016/S1369-8001(00)00117-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microstructural transformations in p-GaAs/Ni/Zn contact have been studied by a combined use of XTEM, SIMS and XRD. The results give evidence that the thermally activated contact reaction leads to the formation of an ohmic contact to p-GaAs via the process of solid-phase regrowth. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：289 / 291

页数：3

共 5 条

[1]

GUYLAI J, 1971, J APPL PHYS, V42, P3578

[2] EVOLUTION OF THE MICROSTRUCTURE OF AU(ZN) METALLIZATION DURING FORMATION OF AN OHMIC CONTACT TO P-TYPE GAAS [J].