The pinch-off effect and inhomogeneous barrier height analysis in Al/p-GaAs Schottky barrier diodes

被引：0
作者：
Soylu, M. [2 ]
Yakuphanoglu, F. [1 ]
Farooq, W. A. [3 ]
机构：
[1] Firat Univ, Dept Met & Mat Engn, TR-23119 Elazig, Turkey
[2] Bingol Univ, Fac Sci, Dept Phys, Bingol, Turkey
[3] King Saud Univ, Coll Sci, Dept Phys, Riyadh 11451, Saudi Arabia
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2011年 / 5卷 / 1-2期
关键词：
GaAs; Schottky diode; I-V and C-V measurements; Barrier inhomogeneities; INDUCED GAP STATES; CURRENT-VOLTAGE CHARACTERISTICS; ELECTRON-EMISSION MICROSCOPY; SERIES RESISTANCE; IDEALITY FACTORS; CONTACTS; PARAMETERS; TRANSPORT; SURFACE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al/p-GaAs Schottky barrier diodes (33 dots) were identically prepared. The effective barrier height values of one of the Al/p-GaAs Schottky barrier diodes were obtained as 0.681 and 0.945 eV from current voltage characteristics using the thermionic emission theory and capacitance voltage characteristics, respectively. The discrepancy between the barrier heights was explained in terms of barrier height inhomogeneity approach. It is seen that the Schottky barrier heights and ideality factors obtained from the I-V characteristics differ from diode to diode even if the samples are identically prepared. The origin of the barrier height inhomogeneity was analyzed by considering theoretical results obtained by Tung model. The obtained results indicate that the electron transport at the metal/semiconductor contacts are significantly affected by patches, but, the potential in front of small patches with low SBH surrounded by patches with high SBH is pinched off.
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页码：135 / 142
页数：8
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