Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

被引:7
作者
Tang, Baoshan [2 ]
Zhao, Yunshan [3 ,4 ]
Zhou, Changjie [5 ]
Zhang, Mingkun [1 ]
Zhu, Huili [5 ]
Li, Yida [6 ]
Leong, Jin Feng [2 ]
Shuai, Hao [1 ]
Gong, Hao [7 ]
Yang, Weifeng [1 ]
机构
[1] Xiamen Univ, Sch Elect Sci & Engn, Dept Microelect & Integrated Circuit, Xiamen 361005, Peoples R China
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[3] Nanjing Normal Univ, NNU SULI Thermal Energy Res Ctr NSTER, Nanjing 210023, Peoples R China
[4] Nanjing Normal Univ, Sch Phys & Technol, Ctr Quantum Transport & Thermal Energy Sci CQTES, Nanjing 210023, Peoples R China
[5] Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China
[6] Southern Univ Sci & Technol, Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Com, Shenzhen 518055, Peoples R China
[7] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
关键词
two-dimensional transition metal dichalcogenides; field-effect transistors; defect engineering; Ga ion irradiation; LAYER; IMPLANTATION; EPITAXY;
D O I
10.1007/s40843-021-1782-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic regulation of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a crucial step towards next-generation optoelectronics and electronics. Here, we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide (MoS2) using a focused ion beam with a low-energy gallium ion (Ga+) source. We find that the surface defects of MoS2 can be tuned by the precise control of ion energy and dose. Furthermore, the field-effect transistors based on the monolayer MoS2 show a significant threshold voltage modulation over 70 V after Ga+ irradiation. First-principles calculations reveal that the Ga impurities in the monolayer MoS2 introduce a defect state near the Fermi level, leading to a shallow acceptor level of 0.25 eV above the valence band maximum. This defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner, tailoring the electronic properties of 2D TMDCs for novel devices.
引用
收藏
页码:741 / 747
页数:7
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