A review of ultra-thin ferroelectric films

被引:18
作者
Yuan, Zi-Lin [1 ]
Sun, Yu [1 ]
Wang, Dan [2 ,3 ]
Chen, Ke-Qiu [1 ]
Tang, Li-Ming [1 ]
机构
[1] Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Peoples R China
[2] Cent South Univ Forestry & Technol, Coll Sci, Changsha 410004, Peoples R China
[3] Cent South Univ Forestry & Technol, Coll Mat Sci & Engn, Hunan Prov Key Lab Mat Surface & Interface Sci &, Changsha 410004, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric; ultra-thin films; 2D materials; DOPED HAFNIUM OXIDE; CRYSTAL-STRUCTURE; BEHAVIOR; TRIFLUOROETHYLENE; POLARIZATION; TRANSITION; THICKNESS; HISTORY; BATIO3;
D O I
10.1088/1361-648X/ac145c
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Ultrathin ferroelectrics are of great technological interest for high-density electronics, particularly non-volatile memories and field-effect transistors. With the rapid development of micro-electronics technology, there is an urgent requirement for higher density electronic devices, which need ultra-thin ferroelectric materials films. However, as ferroelectric films have becomes thinner and thinner, electrical spontaneous polarization signals have been found in a few atomic layers or even monolayer structures. The mechanisms of detection and formation of these signals are not well understood and various controversial interpretations have emerged. In this review, we summarized the recent research progress in the ultra-thin film ferroelectric material, such as HfO2, CuInP2S6, In2Se3, MoTe2 and BaTiO3. Various key aspects of ferroelectric materials are discussed, including crystal structure, ferroelectric mechanism, characterization, fabrication methods, applications, and future outlooks. We hope this review will offer ideas for further improvement of ferroelectric properties of ultra-thin films and promotes practical applications.
引用
收藏
页数:15
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