Influence of impurity gas in the sputtering atmosphere on the microstructure and the GMR in Co/Cu multilayers

被引:6
作者
Miura, S [1 ]
Takahashi, D [1 ]
Tsunoda, M [1 ]
Takahashi, M [1 ]
机构
[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 98077, Japan
关键词
D O I
10.1109/20.706319
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of impurity gas in the sputtering atmosphere on the microstructure and the GMR was investigated on Co/Cu multilayers. The MR ratio increased from 12 % to 27 %, when the chamber pressure, Pb before introducing Ar was changed from 5x10(-8) Torr to 2x10(-5) Torr by leaking air. From structural analysis, the multilayer fabricated with P-b=2x10(-5) Torr has a small grain diameter and a relatively fiat stacking structure. Co layers in the multilayer fabricated under highly purified atmosphere and excessively contaminated atmosphere, behaved as particulste in lower temperature.
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页码:936 / 938
页数:3
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