Enhanced gain saturation model of non-linear semiconductor optical amplifiers

被引：1
作者：
Kharraz, O. M. [1 ]
Supa'at, A. S. M. [1 ]
Atieh, A. [2 ]
Zamzuri, A. K. [3 ]
Mahdi, M. A. [4 ]
机构：
[1] Univ Teknol Malaysia, Dept Commun Engn, Skudai 81310, Johor, Malaysia
[2] Optiwave Syst Inc, 7 Capella Court, Ottawa, ON K2E 7X1, Canada
[3] Int Islamic Univ Malaysia, Dept Phys, Kuantan 25710, Pahang, Malaysia
[4] Univ Putra Malaysia, Fac Engn, Wireless & Photon Networks Res Ctr, Upm Serdang 43400, Selangor, Malaysia
来源：
IET OPTOELECTRONICS | 2018年 / 12卷 / 06期
关键词：
gallium arsenide; indium compounds; semiconductor optical amplifiers; III-V semiconductors; optical saturation; enhanced gain saturation model; nonlinear semiconductor optical amplifiers; material-dependent gain compression factor; extra gain compression term; nonlinear SOAs; rate equations; steep relaxation oscillations; mean square error; InGaAs; INGAASP LASERS;
D O I：
10.1049/iet-opt.2018.5029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study proposes an enhanced gain saturation model of non-linear semiconductor optical amplifiers (SOAs) by incorporating material-dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium-Gallium-Arsenide material-based SOA to account for the steep relaxation oscillations behaviour of non-linear SOAs. The proposed gain saturation model is verified with experimental results that showed very good agreements with a mean square error of 0.094.
引用
收藏
页码：263 / 268
页数：6
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