Phase Change Memory

被引：1423

作者：

Wong, H. -S. Philip ^{[1
]}

Raoux, Simone ^{[2
]}

Kim, SangBum ^{[1
]}

Liang, Jiale ^{[1
]}

Reifenberg, John P. ^{[3
]}

Rajendran, Bipin ^{[2
]}

Asheghi, Mehdi ^{[4
]}

Goodson, Kenneth E. ^{[4
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Intel Corp, Santa Clara, CA 95054 USA

[4] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

来源：

PROCEEDINGS OF THE IEEE | 2010年 / 98卷 / 12期

基金：

美国国家科学基金会;

关键词：

Chalcogenides; emerging memory; heat conduction; nonvolatile memory; PCRAM; phase change material; phase change memory (PCM); PRAM; thermal physics; RANDOM-ACCESS MEMORY; INTRINSIC DATA RETENTION; COMPACT THERMAL-MODEL; MULTILEVEL STORAGE; CELL OPTIMIZATION; READ PERFORMANCE; HIGH-SPEED; PART II; CRYSTALLIZATION; RESISTANCE;

D O I：

10.1109/JPROC.2010.2070050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

引用

页码：2201 / 2227

页数：27

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