Phase Change Memory

被引：1423

作者：

Wong, H. -S. Philip ^{[1
]}

Raoux, Simone ^{[2
]}

Kim, SangBum ^{[1
]}

Liang, Jiale ^{[1
]}

Reifenberg, John P. ^{[3
]}

Rajendran, Bipin ^{[2
]}

Asheghi, Mehdi ^{[4
]}

Goodson, Kenneth E. ^{[4
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Intel Corp, Santa Clara, CA 95054 USA

[4] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

来源：

PROCEEDINGS OF THE IEEE | 2010年 / 98卷 / 12期

基金：

美国国家科学基金会;

关键词：

Chalcogenides; emerging memory; heat conduction; nonvolatile memory; PCRAM; phase change material; phase change memory (PCM); PRAM; thermal physics; RANDOM-ACCESS MEMORY; INTRINSIC DATA RETENTION; COMPACT THERMAL-MODEL; MULTILEVEL STORAGE; CELL OPTIMIZATION; READ PERFORMANCE; HIGH-SPEED; PART II; CRYSTALLIZATION; RESISTANCE;

D O I：

10.1109/JPROC.2010.2070050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.

引用

页码：2201 / 2227

页数：27

共 50 条

[21] PHASE-CHANGE TECHNOLOGY AND THE FUTURE OF MAIN MEMORY
Lee, Benjamin C.
Zhou, Ping
Yang, Jun
Zhang, Youtao
Zhao, Bo
Ipek, Engin
Mutlu, Onur
Burger, Doug
IEEE MICRO, 2010, 30 (01) : 131 - 141
[22] Phase change random access memory, thermal analysis
Sadeghipour, Sadegh M.
Pileggi, Larry
Asheghi, Mehdi
2006 PROCEEDINGS 10TH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONICS SYSTEMS, VOLS 1 AND 2, 2006, : 660 - +
[23] Impact of Thermoelectric Effects on Phase Change Memory Characteristics
Ciocchini, Nicola
Laudato, Mario
Leone, Antonio
Fantini, Paolo
Lacaita, Andrea L.
Ielmini, Daniele
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3264 - 3271
[24] Atomistic Simulation of Phase Change Memory During Switching
Chen, Yihan
Zhang, Lining
Chan, Mansun
Cheung, King Tai
Wang, Yin
Wang, Jian
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
[25] Recent Progress in Phase-Change Memory Technology
Burr, Geoffrey W.
Brightsky, Matthew J.
Sebastian, Abu
Cheng, Huai-Yu
Wu, Jau-Yi
Kim, Sangbum
Sosa, Norma E.
Papandreou, Nikolaos
Lung, Hsiang-Lan
Pozidis, Haralampos
Eleftheriou, Evangelos
Lam, Chung H.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2016, 6 (02) : 146 - 162
[26] Spatially inhomogeneous operation of phase-change memory
Kim, Dasol
Hwang, Soobin
Jung, Taek Sun
Ahn, Min
Jeong, Jaehun
Park, Hanbum
Park, Juhwan
Kim, Jae Hoon
Choi, Byung Joon
Cho, Mann-Ho
APPLIED SURFACE SCIENCE, 2022, 589
[27] Crystal growth within a phase change memory cell
Sebastian, Abu
Le Gallo, Manuel
Krebs, Daniel
NATURE COMMUNICATIONS, 2014, 5
[28] A Durable and Energy Efficient Main Memory Using Phase Change Memory Technology
Zhou, Ping
Zhao, Bo
Yang, Jun
Zhang, Youtao
ISCA 2009: 36TH ANNUAL INTERNATIONAL SYMPOSIUM ON COMPUTER ARCHITECTURE, 2009, : 14 - 23
[29] ADAPT: A Write Disturbance-Aware Programming Technique for Scaled Phase Change Memory
Imran, Muhammad
Kwon, Taehyun
Yang, Joon-Sung
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 41 (04) : 950 - 963
[30] Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part I: Experimental Study
Ielmini, Daniele
Sharma, Deepak
Lavizzari, Simone
Lacaita, Andrea L.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) : 1070 - 1077

← 1 2 3 4 5 →