Preparation of Ga1-xMnxN bulk single crystals with c-axis parallel to dominant plane of platelets

被引：4

作者：

Szyszko, T

Karninski, M

Podsialdlo, S

Wozniak, K

Dobrzycki, L

Gebicki, W

机构：

[1] Warsaw Univ Technol, Fac Chem, PL-00664 Warsaw, Poland

[2] Univ Warsaw, Dept Chem, PL-02093 Warsaw, Poland

[3] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 276卷 / 3-4期

关键词：

x-ray studies; single crystals growth; vapor phase epitaxy; gallium manganese nitride;

D O I：

10.1016/j.jcrysgro.2004.12.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The synthesis and characterization of bulk GaMnN crystals are reported. The crystals were prepared from solid gallium and powdered manganese sources and reacted with ammonia. Electron probe measurements found the crystals containing 5 at% Mn. Structural characterization of the crystals were performed using X-ray diffraction and were found to have the c-axis, parallel to the dominant plane of the platelets. Additionally, the Raman Spectra of the bulk crystals was obtained and compared to that of undoped GaN. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：419 / 423

页数：5