Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

被引：0

作者：

Nallet, F ^{[1
]}

Sénès, A ^{[1
]}

Planson, D ^{[1
]}

Locatelli, ML ^{[1
]}

Chante, JP ^{[1
]}

Taboy, JP ^{[1
]}

机构：

[1] INSA Lyon, Ctr Genie Elect Lyon, CEGELY, UMR 5005, F-69621 Villeurbanne, France

来源：

IPEMC 2000: THIRD INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-3, PROCEEDINGS | 2000年

关键词：

SiC; current limiting device; serial protection; temperature; 2D finite element simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The subject of this paper is a study of the ability of silicon carbide to be used for new solid state power device applications. By the way, a 4H-SiC current limiting device is studied. The device structure is a vertical power Mosfet like with a preformed N channel. Its electrothermal behavior is presented through simulations with ISE TCAD tools. The efficiency of such silicon device is estimated for comparison with SiC. A full simulation with two SiC devices inside a HSPICE modeled circuit is also proposed to study the ability of a bi-directional serial protection system.

引用

页码：396 / 401

页数：6

共 16 条

[1] Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications
Nallet, F
Sénès, A
Planson, D
Locatelli, ML
Chante, JP
Renault, D
12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, : 287 - 290
[2] Experimental characterization of a 4H-SiC high voltage current limiting device
Nallet, F
Planson, D
Godignon, P
Locatelli, ML
Lazar, M
Chante, JP
APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 404 - 407
[3] 500 °C, High Current Linear Voltage Regulator in 4H-SiC BJT Technology
Kargarrazi, Saleh
Elahipanah, Hossein
Rodriguez, Saul
Zetterling, Carl-Mikael
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (04) : 548 - 551
[4] Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes
Rossmann, H. R.
Bubendorf, A.
Zanella, F.
Marjanovic, N.
Schnieper, M.
Meyer, E.
Jung, T. A.
Gobrecht, J.
Minamisawa, R. A.
Bartolf, H.
MICROELECTRONIC ENGINEERING, 2015, 145 : 166 - 169
[5] Evaluation of trench oxide protection techniques on ultra high voltage (10 kV) 4H-SiC UMOSFETs
Rashid, SJ
Mihaila, A
Udrea, F
Malhan, RK
Amaratunga, G
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1441 - 1444
[6] Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current
Liu, Li
Wang, Jue
Wang, Hengyu
Ren, Na
Guo, Qing
Sheng, Kuang
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) : 104 - 107
[7] Analysis of the current-voltage-temperature characteristics of W/4H-SiC Schottky barrier diodes for high performance temperature sensors
Zeghdar, K.
Bencherif, H.
Dehimi, L.
Pezzimenti, F.
Della Corte, F. G.
2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 2019, : 277 - 280
[8] Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions
Zhu, Huili
Hong, Zifan
Zhou, Changjie
Wu, Qihui
Zheng, Tongchang
Yang, Lan
Lan, Shuqiong
Yang, Weifeng
FRONTIERS OF PHYSICS, 2023, 18 (01)
[9] Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions
Huili Zhu
Zifan Hong
Changjie Zhou
Qihui Wu
Tongchang Zheng
Lan Yang
Shuqiong Lan
Weifeng Yang
Frontiers of Physics, 2023, 18
[10] Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions
Zhu Huili
Hong Zifan
Zhou Changjie
Wu Qihui
Zheng Tongchang
Yang Lan
Lan Shuqiong
Yang Weifeng
Frontiers of Physics, 2023, 18 (01)

← 1 2 →