Enhanced Thermoelectric Performance of Zr1-xTaxNiSn Half-Heusler Alloys by Diagonal-Rule Doping

被引：33

作者：

Yang, Xiong ^{[1
]}

Jiang, Zhou ^{[2
]}

Kang, Huijun ^{[1
]}

Chen, Zongning ^{[1
]}

Guo, Enyu ^{[1
]}

Liu, Daquan ^{[1
]}

Yang, Fenfen ^{[1
]}

Li, Rengeng ^{[1
]}

Jiang, Xue ^{[2
]}

Wang, Tongmin ^{[1
]}

机构：

[1] Dalian Univ Technol, Dalian, Peoples R China

[2] Dalian Univ Technol, Ion & Electron Beams, Minist Educ, Dalian, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 03期

基金：

中国国家自然科学基金;

关键词：

thermoelectric; half-Heusler alloys; electrical conductivity; lattice thermal conductivity; doping; LATTICE THERMAL-CONDUCTIVITY; TOTAL-ENERGY CALCULATIONS; MECHANICAL-PROPERTIES; POWER-FACTOR; ZT; NANOCOMPOSITES; FIGURE; MERIT; EFFICIENCY; MOBILITY;

D O I：

10.1021/acsami.9b21517

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Although Sb doping is regarded as the most effective method to regulate the carrier concentration within the optimum range for ZrNiSn-based half-Heusler (HH) alloys, the resulting thermal conductivity remains high. Hence, the aim of this study was to investigate the effect of "diagonal-rule" doping; that is, the Zr site was displaced by Ta, which can simultaneously enhance the electrical conductivity and reduce the lattice thermal conductivity. The solid-solubility limit of Ta in the ZrNiSn matrix was determined to be x = 0.04. The highest ZT, 0.72, was achieved at 923 K for Zr0.98Ta0.02NiSn. In addition, ZT(avg) increased by 10.2% for Zr0.98Ta0.02NiSn compared with that for ZrNiSn0.99Sb0.01 at 873 K, which was mainly attributed to the reduced lattice thermal conductivity of Zr0.98Ta0.02NiSn. These results suggest that Ta doping is more effective than Sb doping in ZrNiSn-based HH alloys. In addition, the microhardness of Zr1-xTaxNiSn was substantially improved with increasing Ta content and was also much higher than that of other traditional thermoelectric materials.

引用

页码：3773 / 3783

页数：11

共 79 条

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