Evidence for an isotope effect in the electrical transport of thermally generated mobile charges in amorphous SiO2

被引：1

作者：

Devine, RAB ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1336811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal generation of mobile, positively charged species in the gate oxide of metal-oxide-semiconductor field effect transistors has been studied. Static hysteresis in the source-drain current versus gate voltage curves indicates the presence of similar to3.2x10(12) cm(-2) mobile charges in devices annealed in D-2 and H-2 containing atmospheres at 700 degreesC for 30 min. Pulsed switched gate voltage experiments give clear evidence of a (mass)(1/2) effect in the charge transport consistent with identification of the charges as deuterons and protons. (C) 2000 American Institute of Physics. [S0003- 6951(01)05001-X].

引用

页码：4163 / 4165

页数：3

共 8 条

[1] TIME-DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAP FORMATION IN METAL-OXIDE-SEMICONDUCTOR DEVICES AS A FUNCTION OF OXIDE THICKNESS AND APPLIED FIELD [J].

BROWN, DB ;

SAKS, NS .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3734-3747

[2] Dispersive transport of protons in oxides confined in Si/SiO2/Si structures [J].

Devine, NFM ;

Robertson, J ;

Girault, V ;

Devine, RAB .

PHYSICAL REVIEW B, 2000, 61 (23) :15565-15568

[3]

DEVINE RLS, UNPUB J APPL PHYS

[4] SIMPLE APPROXIMATE SOLUTIONS TO CONTINUOUS-TIME RANDOM-WALK TRANSPORT [J].

MCLEAN, FB ;

AUSMAN, GA .

PHYSICAL REVIEW B, 1977, 15 (02) :1052-1061

[5] THE TIME-DEPENDENCE OF POSTIRRADIATION INTERFACE TRAP BUILDUP IN DEUTERIUM-ANNEALED OXIDES [J].

SAKS, NS ;

RENDELL, RW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :2220-2229

[6] ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS [J].

SCHER, H ;

MONTROLL, EW .

PHYSICAL REVIEW B, 1975, 12 (06) :2455-2477

[7]

Sze S.M., 1981, PHYS SEMICONDUCTOR D

[8] Non-volatile memory device based on mobile protons in SiO2 thin films [J].

Vanheusden, K ;

Warren, WL ;

Devine, RAB ;

Fleetwood, DM ;

Schwank, JR ;

Shaneyfelt, MR ;

Winokur, PS ;

Lemnios, ZJ .

NATURE, 1997, 386 (6625) :587-589

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