Elements distribution and interfacial structure of CaO-SiO2-10mass% MnO under CO-CO2-SO2-Ar gas

被引:14
作者
He, Xiaobo [1 ]
Wang, Lijun [2 ]
Chou, Kuochih [1 ]
机构
[1] Univ Sci & Technol Beijing, State Key Lab Adv Met, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Collaborat Innovat Ctr Steel Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
Gas-slag interface; Structure; XPS; Raman; Distribution; SILICATE MELTS; QUANTITATIVE-ANALYSIS; CAO-SIO2-MNO SLAG; VISCOSITY; SULFUR; OXYGEN; DROPLETS; BEHAVIOR; GLASSES; XPS;
D O I
10.1016/j.jallcom.2021.160209
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, the interfacial element distribution and structure of CaO-SiO2-10%mass MnO slag was explored using the gas-slag equilibrium experimental method and XPS detection method at the temperature of 1873 K. Based on the full spectrum, the relative content of sulfur gradually decreases, the manganese has the same trend, while the calcium content keeps increasing. According to the analysis of the Mn2p and S2p spectra, it indicated that Mn and S exist as positive divalent (Mn2+) and negative divalent (S2-), respectively. The O1s fitting result indicates that the proportion of non-bridged oxygen (O-) increased, while that of bridged oxygen (O-0) decreased with the etching time increased. The structural units obtained by Raman spectroscopy are closer to the evaluation data of the CaO-SiO2 system, while the interfacial structure information tends to the MnO-SiO2 system. Although CaS is thermodynamically more stable than MnS, the reason for the sulfur accumulation in the gas-slag interface is due to the d electron supplement from Mn. Thus, the concept of interface sulfide capacity is proposed. As the etching depth increases, the interface sulfide capacity decreases continuously. Comparing XPS and Raman, the structure has a gradient change trend at the gas-slag interface, which confirms the presence of the boundary layer at the gas-slag interface. (C) 2021 Elsevier B.V. All rights reserved.
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页数:7
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