Grain Boundary Effect on Charge Transport in Pentacene Thin Films

被引：14

作者：

Weis, Martin ^{[1
]}

Gmucova, Katarina ^{[1
]}

Nadazdy, Vojtech ^{[1
]}

Majkova, Eva ^{[1
]}

Hasko, Daniel ^{[2
]}

Taguchi, Dai ^{[3
]}

Manaka, Takaaki ^{[3
]}

Iwamoto, Mitsumasa ^{[3
]}

机构：

[1] Slovak Acad Sci, Inst Phys, Bratislava 84511 45, Slovakia

[2] Ctr Int Laser, Bratislava 81219, Slovakia

[3] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; PERFORMANCE;

D O I：

10.1143/JJAP.50.04DK03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on charge transport properties of polycrystalline pentacene films with variable average grain size in the range from 0.1 to 0.3 mu m controlled by the preparation technology. We illustrate with the organic field-effect transistors decrease of the effective mobility and presence of traps with decrease of the grain size. Analysis of the charge transfer excitons reveals decrease of the mobile charge density and the steady-state voltammetry showed significant increase of oxygen-and hydrogen-related defects. We also briefly discuss accumulation of the defects on the grain boundary and show relation between the defect density and grain boundary length. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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