The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides

High-brightness nitride-based LEDs have been grown on SiC substrates. which offers many advantages in the production both from epitaxial, chip and device processing point of view. Optimized InGaN/GaN/GaAlN MQW structures and improved chip and package designs were developed, resulting in optical outputs that exceed 7 mW at 20 mA in a 5 mm axial lamp. InGaN oxide stripe lasers (450) mum x 3.5 mum) with an emission wavelength around 420 nm were fabricated showing threshold currents of 330 mA and turn-on voltages of about 21V operated under pulse current injections at room temperature, Strained layer GaInAsSb/AlGaAsSb quantum well lasers operating near room temperature with emission wavelengths up to 2.26 mum and a cw output of WO mW were demonstrated. Short-period InAs/GalnSb superlattices with different InAs layer. widths have been used for the fabrication of photodiodes, showing responsivity spectra with cut-off wavelengths of 3.5 and 10 mum, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.