Effect of vacancy-type oxygen deficiency on electronic structure in amorphous alumina

被引：36

作者：

Momida, Hiroyoshi ^{[1
]}

Nigo, Seisuke ^{[2
]}

Kido, Giyuu ^{[2
]}

Ohno, Takahisa ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 04期

关键词：

HIGH-K DIELECTRICS; DEFECTS; ENERGY; OXIDES; GAS;

D O I：

10.1063/1.3548549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic and atomic structures associated with a vacancy-type oxygen deficiency in an amorphous alumina model are studied by first-principles calculations. The energy levels of the oxygen defects significantly shift depending on their charge states because of remarkable changes of local atomic structures. That is different in character from the alpha crystal case. We discuss a possibility of the oxygen defects as a conductive path and present an atomistic mechanism of the resistive switching effects in the memory devices. (c) 2011 American Institute of Physics. [doi:10.1063/1.3548549]

引用

页数：3

共 21 条

[1] First principles investigation of defects at interfaces between silicon and amorphous high-κ oxides [J].

Broqvist, Peter ;

Pasquarello, Alfredo .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2022-2027

[2] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[3] ELECTRONIC BAND-STRUCTURE OF AL2O3, WITH COMPARISON TO AION AND AIN [J].

FRENCH, RH .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (03) :477-489

[4] TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching [J].

Fujimoto, Masayuki ;

Koyama, Hiroshi ;

Konagai, Masashi ;

Hosoi, Yasunari ;

Ishihara, Kazuya ;

Ohnishi, Shigeo ;

Awaya, Nobuyoshi .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[5] INHOMOGENEOUS ELECTRON-GAS [J].

RAJAGOPAL, AK ;

CALLAWAY, J .

PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919

[6] Structure of duplex oxide layer in porous alumina studied by 27Al MAS and MQMAS NMR [J].

Iijima, T ;

Kato, S ;

Ikeda, R ;

Ohki, S ;

Kido, G .

CHEMISTRY LETTERS, 2005, 34 (09) :1286-1287

[7] Transport Properties of Anodic Porous Alumina for ReRAM - art. no. 012017 [J].

Kato, S. ;

Nigo, S. ;

Lee, J. W. ;

Mihalik, M. ;

Kitazawa, H. ;

Kido, G. .

INTERNATIONAL SYMPOSIUM ON ADVANCED NANODEVICES AND NANOTECHNOLOGY, 2008, 109 :12017-12017

[8] Resistive switching of aluminum oxide for flexible memory [J].

Kim, Sungho ;

Choi, Yang-Kyu .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[9] High-k dielectrics for future generation memory devices (Invited Paper) [J].

Kittl, J. A. ;

Opsomer, K. ;

Popovici, M. ;

Menou, N. ;

Kaczer, B. ;

Wang, X. P. ;

Adelmann, C. ;

Pawlak, M. A. ;

Tomida, K. ;

Rothschild, A. ;

Govoreanu, B. ;

Degraeve, R. ;

Schaekers, M. ;

Zahid, M. ;

Delabie, A. ;

Meersschaut, J. ;

Polspoel, W. ;

Clima, S. ;

Pourtois, G. ;

Knaepen, W. ;

Detavernier, C. ;

Afanas'ev, V. V. ;

Blomberg, T. ;

Pierreux, D. ;

Swerts, J. ;

Fischer, P. ;

Maes, J. W. ;

Manger, D. ;

Vandervorst, W. ;

Conard, T. ;

Franquet, A. ;

Favia, P. ;

Bender, H. ;

Brijs, B. ;

Van Elshocht, S. ;

Jurczak, M. ;

Van Houdt, J. ;

Wouters, D. J. .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1789-1795

[10] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].

KOHN, W ;

SHAM, LJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1133-&

← 1 2 3 →