Suppression of stress-induced voiding in copper interconnects

被引:0
作者
Oshima, T [1 ]
Hinode, K [1 ]
Yamaguchi, H [1 ]
Aoki, H [1 ]
Torii, K [1 ]
Saito, T [1 ]
Ishikawa, K [1 ]
Noguchi, J [1 ]
Fukui, M [1 ]
Nakamura, T [1 ]
Uno, S [1 ]
Tsugane, K [1 ]
Murata, J [1 ]
Kikushima, K [1 ]
Sekisaka, H [1 ]
Murakami, E [1 ]
Okuyama, K [1 ]
Iwasaki, T [1 ]
机构
[1] Hitachi Ltd, Device Dev Ctr, Ome, Tokyo 1988512, Japan
来源
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年
关键词
D O I
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We studied stress-induced voiding in Cu interconnects in the temperature range below 250degrees C, and found two different voiding modes. One mode occurs inside a via having wide wire above it, and can be suppressed by optimizing the via shape and the via-cleaning process. The other mode occurs under a via having wide wire below it and can be suppressed by increasing the Cu grain size and improving the adhesion of the barrier metal with Cu.
引用
收藏
页码:757 / 760
页数:4
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