Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

被引：6
作者：
Mi Min-Han [1 ]
Zhang Kai [1 ]
Zhao Sheng-Lei [1 ]
Wang Chong [1 ]
Zhang Jin-Cheng [1 ]
Ma Xiao-Hua [1 ]
Hao Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 02期
基金：
中国国家自然科学基金;
关键词：
GaN-based HEMTs; N2O plasma pre-pretreatment; frequency-dependent conductance; FIELD-EFFECT TRANSISTORS; GAN;
D O I：
10.1088/1674-1056/24/2/027303
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (g(m)) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (D-T) and time constant (tau(T)) of the N2O-treated device are smaller than those of a non-treated device. The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.
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页数：5
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